jiangsu changjiang electronics technology co., ltd SOT-89 plastic-encapsulate transistors 2sd 965a transistor (npn) features z audio amplifier z flash unit of camera z switching circuit maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 7 v i c collector current -continuous 5 a p c collector power dissipation 750 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =0.1ma, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 1ma. i b =0 30 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 7 v collector cut-off current i cbo v cb = 10v,i e =0 0.1 a emitter cut-off current i ebo v eb =7v, i c =0 0.1 a h fe(1) v ce = 2 v, i c =1ma 200 h fe?(2) v ce = 2v, i c = 500ma 230 800 dc current gain h fe(3) v ce = 2v, i c =2a 150 collector-emitter saturation voltage v ce(sat) i c =3a, i b =0.1a 1 v transition frequency f t v ce =6v, i c =50ma 150 mhz out capacitance cob v cb =20 v , i e =0, f=1mh z 50 pf classification of h fe(2) rank q r s range 230-380 340-600 560-800 SOT-89 1. base 2. collector 3. emitter 1 2 3
typical characteristics 2sd965a
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